Gate Drive High Frequency Transformer For IGBT 2KV Hi-Pot

Gate Drive Transformer For IGBT​ , High Frequency Transformer

Gate dirve transformers for IGBT need to ensure excebehavior as well as safe galvanic separation betweer voltage side

Turns ratio: 1:1.2:1.2

Inductance: 1.4mH Typ.@100KHz

Leakage inductance: 0.3uH Ref@100KHz

Coupling capacitance: 12pF Pri to Sec

Power: 3W

FEATURES:

• Developed for 1200 V IGBT applications
• Low coupling capacitance
• High insulation strength(reinforced insulation)
• Very high corona extinction voltage
• Compact designs in THT and SMT casings
• Large voltage time area in extremely compact design
• Very low leakage inductance

Applications:

• Renewables(i.e. solar inverters, converters for wind turbines or grid connection)
• Power supplies for welding equipment
• Uninterruptable power supplies(UPS)
• Medical devices such as X-rays and laser

ABOUT US:

Shinhom Enterprise was founded in Xi'an China with nearly 20 years of experiencing of designing & manufacturing transformers & Coils components.
High quality, low cost and best service are what we pursuit most!
Meanwhile, the certification of ISO 9001 by SGS system was also earned.
Shinhom is to remain a specialist in designing and manufacturing high-performance transformers,power inductors, choke coils power supplies for purchasers around the world.

Gate Drive Transformer

High Frequency Transformer For IGBT

2KV Transformer For IGBT

Gate Drive High Frequency Transformer For IGBT 2KV Hi-Pot Images